tsop348..b document number 84665 rev. 1.0, 28-feb-05 vishay semiconductors www.vishay.com 1 16672 1 2 3 ir receiver modules for remote control systems description the tsop348..b - series are miniaturized receivers for infrared remote contro l systems. pin diode and preamplifier are assembled on lead frame, the epoxy package is designed as ir filter. the demodulated output signal can directly be decoded by a microprocessor. tsop348..b is the standard ir remote control receiver series for 3 v supply voltage, supporti ng all major transmission codes. features ? photo detector and preamplifier in one package internal filter for pcm frequency improved shielding against electrical field disturbance ttl and cmos compatibility output active low supply voltage range: 2.7 v to 5.5 v improved immunity against ambient light mechanical data pinning: 1 = out, 2 = gnd, 3 = v s parts table block diagram application circuit part carrier frequency TSOP34830B 30 khz tsop34833b 33 khz tsop34836b 36 khz tsop34837b 36.7 khz tsop34838b 38 khz tsop34840b 40 khz tsop34856b 56 khz 30 k ? 2 3 1 v s out demo- gnd pass agc input pin band dulator control circuit 16833 c 1 = 4. 7 f tsop xxxx out gnd circuit c r 1 = 100 ? + v s gnd transmitter w it h tsa lxxxx v s r 1 + c 1 recommended to suppress po w er suppl y distur b ances . v o t h e output v olta g es h ould not b e h old continuousl y at a v olta g e b elo w v o = 2 . 0v by t h ee x ternal circuit . 17170
www.vishay.com 2 document number 84665 rev. 1.0, 28-feb-05 vishay tsop348..b vishay semiconductors absolute maximum ratings absolute maximum ratings t amb = 25 c, unless otherwise specified electrical and opti cal characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit supply voltage (pin 3) v s - 0.3 to + 6.0 v supply current (pin 3) i s 3ma output voltage (pin 1) v o - 0.3 to v s + 0.3 v v output current (pin 1) i o 10 ma junction temperature t j 100 c storage temperature range t stg - 25 to + 85 c operating temperature range t amb - 25 to + 85 c power consumption (t amb 85 c) p tot 30 mw soldering temperature t 10 s t sd 260 c parameter test condition symbol min ty p. max unit supply current (pin 3) e v = 0 i sd 0.7 1.2 1.5 ma e v = 40 klx, sunlight i sh 1.3 ma supply voltage v s 2.7 5.5 v transmission distance e v = 0, test signal see fig.1, ir diode tsal6200, i f = 250 ma d35m output voltage low (pin 1) i osl = 0.5 ma, e e = 0.7 mw/m 2 , test signal see fig. 1 v osl 250 mv minimum irradiance (30 - 40 khz) v s = 3 v pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.1 e e min 0.2 0.4 mw/m 2 minimum irradiance (56 khz) v s = 3 v pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.1 e e min 0.3 0.5 mw/m 2 minimum irradiance (30 - 40 khz) v s = 5 v pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.1 e e min 0.35 0.5 mw/m 2 minimum irradiance (56 khz) v s = 5 v pulse width tolerance: t pi - 5/f o < t po < t pi + 6/f o , test signal see fig.1 e e min 0.45 0.6 mw/m 2 maximum irradiance t pi - 5/f o < t po < t pi + 6/f o , test signal see fig. 1 e e max 30 w/m 2 directivity angle of half transmission distance ? 1/2 45 deg
vishay tsop348..b document number 84665 rev. 1.0, 28-feb-05 vishay semiconductors www.vishay.com 3 typical characteris tics (tamb = 25 c unless otherwise specified) figure 1. output function figure 2. pulse length and sens itivity in dark ambient figure 3. output function e e t t pi * t * t pi 10 /f o is recommended f or optimal f unction v o v o h v o l t 16110 optical test signal ( i r diode tsa l 6200 , i f = 0 .4 a , 30 pulses , f = f 0 , t = 10 ms ) output signal t d 1 ) t po 2 ) 1 ) 7 /f 0 < t d < 1 5/f 0 2 ) t pi C5/f 0 < t po < t pi + 6 /f 0 0 . 0 0 . 1 0 . 2 0 . 3 0 .4 0 .5 0 . 6 0 . 7 0 . 8 0 .9 1 . 0 0 . 11 . 010 . 0 100 . 0 1000 . 010000 . 0 e e C irradiance ( m w/ m 2 ) 16 9 08 input burst duration = 95 0 nm , optical test si g nal , f i g. 1 output pulse t C output pulse w idt h ( ms ) po e e t v o v o h v o l t 600 s 600 s t = 60 ms t on t o ff 94 813 4 optical t est signal output signal , ( see f i g.4 ) figure 4. output pulse diagram figure 5. frequency dependence of responsivity figure 6. sensitivity in bright ambient t , t C output pulse w idt h ( ms ) 0 . 0 0 . 1 0 . 2 0 . 3 0 .4 0 .5 0 . 6 0 . 7 0 . 8 0 .9 1 . 0 0 . 11 . 010 . 0 100 . 0 1000 . 010000 . 0 e e C irradiance ( m w/ m 2 ) 16 9 0 9 to ff = 95 0 nm , optical test si g nal , f i g. 3 to n on o ff 0 . 0 0 . 2 0 .4 0 . 6 0 . 8 1 . 0 1 . 2 0 . 70 .9 1 . 11 . 3 f/f 0 C r elati v e f re q uenc y 16 9 2 5 f = f 0 5% f ( 3db ) = f 0 / 10 e / e C r el . r esponsi v it y e min e 0 . 0 0 .5 1 . 0 1 .5 2 . 0 2 .5 3 . 0 3 .5 4. 0 0 . 01 0 . 10 1 . 00 10 . 00 100 . 00 e C am b ient dc irradiance (w/ m 2 ) 16 9 11 correlation w it h am b ient li gh t sources : 10 w/ m 2 1 .4 kl x ( std . illum . a , t = 28 55k) 10 w/ m 2 8 . 2kl x ( da y li gh t , t =59 00 k) am b ient , = 95 0 nm e C t h res h old irradiance ( m w/ m ) e min 2
www.vishay.com 4 document number 84665 rev. 1.0, 28-feb-05 vishay tsop348..b vishay semiconductors figure 7. sensitivity vs. supply voltage disturbances figure 8. sensitivity vs. el ectric field disturbances figure 9. max. envelope duty cycle vs. burstlength 0 . 0 0 .5 1 . 0 1 .5 2 . 0 0 . 11 . 010 . 0 100 . 0 1000 . 0 v s rm s C ac volta g e on dc suppl y volta g e ( mv ) 16 9 12 f = f o f = 10 k hz e C t h res h old irradiance ( m w/ m ) e min 2 f = 1 k hz f = 100 hz e C t h res h old irradiance ( m w/ m ) 0 . 00 .4 0 . 81 . 21 . 6 0 . 0 0 .4 0 . 8 1 . 2 2 . 0 e C f ield stren g t h o f distur b ance ( kv / m ) 2 . 0 94 81 4 7 1 . 6 e min 2 f(e) = f 0 0 . 0 0 . 1 0 . 2 0 . 3 0 .4 0 .5 0 . 6 0 . 7 0 . 8 020 4 0 60 80 100 120 burst l en g t h ( num b er o f c y cles / b urst ) 16 9 13 f = 38 k hz, e e = 2 m w/ m 2 m a x. e n v elope dut y c y cle igure 10.sensitivityvs.amienttemperature igure 11.relativespectral sensitivityvs.wavelength igure 12.sensitivityvs.supplyvoltage 0 . 0 0 . 1 0 . 2 0 . 3 0 .4 0 .5 0 . 6 C 30 C 1 5 01 5 30 45 60 7 59 0 t am b C am b ient temperature ( q c ) 16 9 18 sensiti v it y in dark am b ient e C t h res h old irradiance ( m w/ m ) e min 2 0 . 0 0 . 2 0 .4 0 . 6 0 . 8 1 . 0 1 . 2 7 5 08 5 0 95 010 5 011 5 0 - w a v elen g t h( nm ) 16 9 1 9 s () - r elati v e spectral sensiti v it y rel 0 . 0 0 . 1 0 . 2 0 . 3 0 .4 0 .5 0 . 6 0 . 7 0 . 8 0 .9 1 . 0 2 . 02 .5 3 . 03 .5 4. 0 4.5 5. 0 5.5 6 . 0 v s C suppl y volta g e ( v ) 1718 5 e C sensiti v it y ( m w/ m ) 2 e min
vishay tsop348..b document number 84665 rev. 1.0, 28-feb-05 vishay semiconductors www.vishay.com 5 suitable data format the circuit of the tsop348..b is designed in that way that unexpected output pulses due to noise or distur- bance signals are avoided. a bandpass filter, an inte- grator stage and an automatic gain control are used to suppress such disturbances. the distinguishing mark between data signal and dis- turbance signal are carrier frequency, burst length and duty cycle. the data signal s hould fulfill the following conditions: carrier frequency should be close to center fre- quency of the bandpass (e.g. 38 khz). burst length should be 10 cycles/burst or longer. after each burst which is between 10 cycles and 70 cycles a gap time of at least 14 cycles is necessary. for each burst which is longer than 1.8 ms a corre- sponding gap time is necessary at some time in the data stream. this gap time should be at least 4 times longer than the burst. up to 800 short bursts per second can be received continuously. some examples for suitable data format are: nec code (repetitive pulse), ne c code (repetitive data), toshiba micom format, sharp code, rc5 code, rc6 code, r-2000 code, sony code. when a disturbance signal is applied to the tsop348..b it can still receive the data signal. how- ever the sensitivity is reduced to that level that no unexpected pulses will occur. some examples for such disturbance signals which are suppressed by the tsop348..b are: dc light (e.g. from tungsten bulb or sunlight) continuous signal at 38 khz or at any other fre- quency signals from fluorescent lamps with electronic bal- last with high or low modulation ( see figure 14 or figure 15). figure 13. directivity 18 549 0 .4 0 . 200 . 20 .4 0 . 6 0 . 6 0 .9 0 30 10 20 4 0 5 0 60 70 80 1 . 0 0 . 8 0 . 7 d rel - r elati v e transmission distance figure 14. ir signal from fluores cent lamp with low modulation figure 15. ir signal from fluores cent lamp with high modulation 0 5 10 1 5 20 time ( ms ) 16 9 20 i r si g nal i r si g nal f rom f luorescent lamp w it h lo w modulation 0 5 10 1 5 20 time ( ms ) 16 9 21 i r si g nal i r si g nal f rom f luorescent lamp w it h h i gh modulation
www.vishay.com 6 document number 84665 rev. 1.0, 28-feb-05 vishay tsop348..b vishay semiconductors package dimensions in mm 16003
vishay tsop348..b document number 84665 rev. 1.0, 28-feb-05 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
|
